TSM2307CX RFG

$0.62

Description：MOSFET P-CHANNEL 30V 3A SOT23
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:eb01b9bdf471 Category: Single FETs, MOSFETs Brand: Taiwan Semiconductor Corporation

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Product introduction

TSM2307CX RFG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is MOSFET P-CHANNEL 30V 3A SOT23. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TSM2307CX RFG

Description：MOSFET P-CHANNEL 30V 3A SOT23
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：95mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：565 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.25W (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for TSM2307CX RFG

TSM2307CX RFG

Single FETs, MOSFETs Overview

The TSM2307CX RFG is a P-channel enhancement mode MOSFET manufactured by Taiwan Semiconductor Corporation. It features a maximum drain-source voltage of 30 V and a continuous drain current of 3 A at case temperature. The device utilizes an SOT-23 surface-mount package with three pins. Key electrical parameters include a maximum on-resistance of 95 mΩ at 10 V gate drive, a typical gate charge of 10 nC at 10 V, and a maximum power dissipation of 1.25 W. The component operates within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

P-channel enhancement mode construction for efficient switching applications
Low on-resistance characteristics optimized for low-voltage power management
Surface-mount SOT-23 packaging suitable for space-constrained designs

Single FETs, MOSFETs Applications

Power management circuits in portable electronic devices
Load switching applications requiring low-side or high-side control
Battery protection systems in consumer electronics

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and manufacturer documentation to confirm compliance with RoHS3 standards and REACH regulations. Ensure that the procurement source provides official datasheets matching the TSM2307CX RFG designation. Confirm moisture sensitivity level classification prior to assembly processing to maintain component integrity during soldering operations.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a 30 V P-channel MOSFET with moderate current handling capabilities. Consider the 95 mΩ on-resistance specification for efficiency calculations under load conditions. Evaluate the thermal performance based on the 1.25 W power dissipation rating and the operating temperature range requirements of the target application environment.

Single FETs, MOSFETs Part Context

This part belongs to the TSM23 series of single FET MOSFETs from Taiwan Semiconductor Corporation. The series includes various N-channel and P-channel variants designed for general-purpose switching applications. The TSM2307 specifically addresses the need for compact, reliable power switches in low-voltage digital systems.