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TSM260P02CX RFG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is -20V, -6.5A, SINGLE P-CHANNEL PO. Review the specifications below when checking this part for your BOM.
The TSM260P02CX RFG is a single P-Channel Power MOSFET manufactured by Taiwan Semiconductor Corporation. It features a -20V drain-source voltage rating and supports a continuous drain current of -6.5A at 25°C ambient temperature. The device exhibits a maximum on-resistance of 26mΩ at VGS = -4.5V, 32mΩ at VGS = -2.5V, and 40mΩ at VGS = -1.8V. Total gate charge is specified as 17nC. It operates within a junction temperature range of -55°C to +150°C and utilizes an SOT-23 package.
Verify the specific ordering code suffix against official manufacturer documentation to confirm packaging details. Confirm that the component meets RoHS compliance standards and halogen-free requirements for your specific manufacturing process. Ensure the moisture sensitivity level aligns with your facility's storage and reflow soldering capabilities before procurement.
Select this component when a low-voltage P-Channel MOSFET with high current capability is required. The device is suitable for designs needing efficient switching with minimal gate drive voltage requirements. Consider the thermal resistance characteristics and package limitations when designing for high-power dissipation scenarios or restricted board space.
This part belongs to the TSM260 series of P-Channel Power MOSFETs from Taiwan Semiconductor. It is designed for general-purpose power switching applications requiring compact surface-mount solutions. The SOT-23 package provides a small footprint suitable for portable electronics and battery-powered equipment where space efficiency is critical.
No public confirmed substitute part numbers are available in the provided documentation.
The maximum pulsed drain current (IDM) is -26 A, provided the pulse width is less than or equal to 100µs.
The maximum on-resistance increases as the gate-source voltage decreases: it is 26mΩ at -4.5V, 32mΩ at -2.5V, and 40mΩ at -1.8V.
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