Single FETs, MOSFETs TSM260P02CX RFG product image

TSM260P02CX RFG

$0.57
  • Description:-20V, -6.5A, SINGLE P-CHANNEL PO
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:cabfe725ceaf Category: Brand:

  
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TSM260P02CX RFG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is -20V, -6.5A, SINGLE P-CHANNEL PO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TSM260P02CX RFG

  • Description:-20V, -6.5A, SINGLE P-CHANNEL PO
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:6.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs:26mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:19.5 nC @ 4.5 V
  • Vgs (Max):±10V
  • Input Capacitance (Ciss) (Max) @ Vds:1670 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):1.56W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23
  • Package / Case:-

Single FETs, MOSFETs datasheet and documents for TSM260P02CX RFG

TSM260P02CX RFG

Single FETs, MOSFETs Overview

The TSM260P02CX RFG is a single P-Channel Power MOSFET manufactured by Taiwan Semiconductor Corporation. It features a -20V drain-source voltage rating and supports a continuous drain current of -6.5A at 25°C ambient temperature. The device exhibits a maximum on-resistance of 26mΩ at VGS = -4.5V, 32mΩ at VGS = -2.5V, and 40mΩ at VGS = -1.8V. Total gate charge is specified as 17nC. It operates within a junction temperature range of -55°C to +150°C and utilizes an SOT-23 package.

Single FETs, MOSFETs Feature Summary

  • Optimized for fast switching performance in power applications
  • Capable of operation with low-level -1.8V gate drive signals
  • Manufactured using lead-free plating processes

Single FETs, MOSFETs Applications

  • Battery pack management systems
  • Portable electronic devices
  • High-side load switch circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code suffix against official manufacturer documentation to confirm packaging details. Confirm that the component meets RoHS compliance standards and halogen-free requirements for your specific manufacturing process. Ensure the moisture sensitivity level aligns with your facility's storage and reflow soldering capabilities before procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage P-Channel MOSFET with high current capability is required. The device is suitable for designs needing efficient switching with minimal gate drive voltage requirements. Consider the thermal resistance characteristics and package limitations when designing for high-power dissipation scenarios or restricted board space.

Single FETs, MOSFETs Part Context

This part belongs to the TSM260 series of P-Channel Power MOSFETs from Taiwan Semiconductor. It is designed for general-purpose power switching applications requiring compact surface-mount solutions. The SOT-23 package provides a small footprint suitable for portable electronics and battery-powered equipment where space efficiency is critical.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current for the TSM260P02CX?

The maximum pulsed drain current (IDM) is -26 A, provided the pulse width is less than or equal to 100µs.

How does the on-resistance vary with gate-source voltage?

The maximum on-resistance increases as the gate-source voltage decreases: it is 26mΩ at -4.5V, 32mΩ at -2.5V, and 40mΩ at -1.8V.

TSM260P02CX RFGTSM260P02CX RFG
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