Single FETs, MOSFETs TSM7N90CI C0G product image

TSM7N90CI C0G

$2.72
  • Description:MOSFET N-CH 900V 7A ITO220AB
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tube

SKU:26538c406c1f Category: Brand:

  
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TSM7N90CI C0G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is MOSFET N-CH 900V 7A ITO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TSM7N90CI C0G

  • Description:MOSFET N-CH 900V 7A ITO220AB
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):900 V
  • Current - Continuous Drain (Id) @ 25°C:7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:1.9Ohm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:49 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:1969 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):40.3W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:ITO-220AB
  • Package / Case:TO-220-3 Full Pack, Isolated Tab

Single FETs, MOSFETs datasheet and documents for TSM7N90CI C0G

TSM7N90CI C0G

Single FETs, MOSFETs Overview

The TSM7N90CI C0G is an N-channel enhancement mode power MOSFET manufactured by Taiwan Semiconductor. It features a maximum drain-source voltage (Vds) of 900 V and a continuous drain current (Id) of 7 A at 25°C case temperature. The device utilizes ITO-220AB packaging for through-hole mounting. Key electrical parameters include a maximum on-resistance (Rds(on)) of 380 mΩ, a gate threshold voltage range of 2 V to 4 V, and a maximum power dissipation of 33 W. It operates within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

  • High voltage capability with 900 V drain-source breakdown
  • Low on-resistance for efficient power switching
  • Robust thermal performance in ITO-220AB package

Single FETs, MOSFETs Applications

  • High-voltage DC-DC converters
  • Industrial motor control systems
  • Power supply unit output stages

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix (CI or CZ) against the required RoHS compliance status and lead-free configuration before ordering. Confirm that the ITO-220AB package dimensions match the target PCB footprint. Ensure the supplier provides official datasheets confirming the 900V rating and 7A current limit to avoid counterfeit or mislabeled components.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high voltage isolation and moderate current handling in through-hole designs. Compare Rds(on) values against alternative 900V MOSFETs to optimize conduction losses. Consider the thermal resistance of the ITO-220AB package when designing heat sinks for continuous operation near the 33 W dissipation limit.

Single FETs, MOSFETs Part Context

This part belongs to Taiwan Semiconductor's high-voltage N-channel MOSFET lineup. It is designed for general-purpose power switching applications where reliability and voltage withstand are critical. The ITO-220AB package offers a balance between thermal performance and ease of manual assembly compared to surface-mount alternatives.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes such as TSM7N90CZ if different packaging variants are needed. Verify pinout compatibility and electrical parameter equivalence before replacing existing designs.

TSM7N90CI C0GTSM7N90CI C0G
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