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TSM7N90CI C0G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is MOSFET N-CH 900V 7A ITO220AB. Review the specifications below when checking this part for your BOM.
The TSM7N90CI C0G is an N-channel enhancement mode power MOSFET manufactured by Taiwan Semiconductor. It features a maximum drain-source voltage (Vds) of 900 V and a continuous drain current (Id) of 7 A at 25°C case temperature. The device utilizes ITO-220AB packaging for through-hole mounting. Key electrical parameters include a maximum on-resistance (Rds(on)) of 380 mΩ, a gate threshold voltage range of 2 V to 4 V, and a maximum power dissipation of 33 W. It operates within a junction temperature range of -55 °C to +150 °C.
Verify the specific suffix (CI or CZ) against the required RoHS compliance status and lead-free configuration before ordering. Confirm that the ITO-220AB package dimensions match the target PCB footprint. Ensure the supplier provides official datasheets confirming the 900V rating and 7A current limit to avoid counterfeit or mislabeled components.
Select this component for applications requiring high voltage isolation and moderate current handling in through-hole designs. Compare Rds(on) values against alternative 900V MOSFETs to optimize conduction losses. Consider the thermal resistance of the ITO-220AB package when designing heat sinks for continuous operation near the 33 W dissipation limit.
This part belongs to Taiwan Semiconductor's high-voltage N-channel MOSFET lineup. It is designed for general-purpose power switching applications where reliability and voltage withstand are critical. The ITO-220AB package offers a balance between thermal performance and ease of manual assembly compared to surface-mount alternatives.
Check for direct substitutes such as TSM7N90CZ if different packaging variants are needed. Verify pinout compatibility and electrical parameter equivalence before replacing existing designs.
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