UB30BCT-E3/8W

Diode Arrays Overview

The UB30BCT-E3/8W is a surface-mount Schottky barrier rectifier manufactured by Vishay General Semiconductor - Diodes Division. It belongs to the TMBS® series and utilizes Trench MOS Barrier Schottky technology. The device features a common cathode configuration with two diodes housed in a TO-263AB (D2PAK) package. Key electrical specifications include a maximum repetitive peak reverse voltage of 30 V, an average forward rectified current of 15 A per diode, and a maximum DC reverse leakage current of 160 µA at 200 V. The forward voltage drop is specified as 1.1 V at 15 A. The component operates within a junction temperature range of -40°C to 150°C.

Diode Arrays Feature Summary

• Trench MOS Barrier Schottky technology for low power loss
• Common cathode dual diode configuration
• High surge overload capability
• Lead-free finish and halogen-free construction

Diode Arrays Applications

• DC-DC converters
• Free-wheeling diodes in low voltage high frequency circuits
• Polarity protection applications

Diode Arrays Procurement Notes

Verify the specific suffix against the manufacturer's latest datasheet to confirm pinout compatibility and thermal characteristics. Ensure the ordering part number matches the required packaging format, such as tape and reel or cut tape, as indicated in official distribution catalogs. Cross-reference the RoHS compliance status with current environmental regulations before finalizing procurement orders.

Diode Arrays Selection Notes

Select this component for applications requiring low forward voltage drop and fast switching speeds in high-current scenarios. The TO-263AB package provides robust thermal performance suitable for surface-mount assembly processes. Consider the 30 V reverse voltage rating when designing circuits with potential voltage spikes exceeding the nominal operating level.

Diode Arrays Part Context

This part is part of Vishay's VB30xxC series of Trench MOS Barrier Schottky rectifiers. These devices are designed to replace traditional silicon p-n junction rectifiers in applications where higher efficiency and faster switching are required. The series offers improved thermal performance compared to standard Schottky diodes.

Diode Arrays Replacement Considerations

Direct replacements include the UB30BCT-M3/8W variant, which differs only in lead material composition. Other compatible parts within the same family may include different voltage ratings such as UB30ACT-E3/8W (20 V) or UB30DCT-E3/8W (40 V), provided the circuit voltage requirements align.