UM7102F

RF Diode Overview

The UM7102F is a silicon PIN diode manufactured by Microchip Technology, housed in a hermetic MELF package. It features a reverse voltage rating of 200 V and a maximum diode capacitance of 1.2 pF. The device exhibits a maximum series resistance of 600 mOhms at mid-frequency maximum conditions and a reverse current of 10 uA. Carrier lifetime is specified at 2 us. Operating temperature ranges from -65 C to +175 C.

RF Diode Feature Summary

• Hermetic sealing for environmental protection
• High power handling capability
• Single configuration design

RF Diode Applications

• High power RF switching
• Attenuator circuits
• Phase shifting networks

RF Diode Procurement Notes

Verify the specific ordering suffix and manufacturer part number against official Microchip documentation before procurement. Confirm that the hermetic MELF package meets the required environmental specifications for the intended application. Ensure compliance with any relevant product change notifications or material declarations provided by the manufacturer.

RF Diode Selection Notes

Select the UM7102F when a high-reliability, hermetically sealed PIN diode is required for high-power applications. Consider its 200 V reverse voltage rating and low capacitance characteristics for RF switching needs. Verify that the operating temperature range of -65 C to +175 C aligns with system requirements.

RF Diode Part Context

The UM7102F belongs to Microchip's family of high-power PIN diodes, which includes variants like UM7104F, UM7106F, and UM7108F. These components share similar structural characteristics but differ primarily in their reverse voltage ratings, allowing designers to choose based on specific circuit voltage requirements while maintaining consistent performance traits.

RF Diode Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data.