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V10K100DU-M3/H is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 100V 5A FLATPAK. Review the specifications below when checking this part for your BOM.
The V10K100DU-M3/H is a high current density surface-mount Trench MOS Barrier Schottky rectifier manufactured by Vishay General Semiconductor. It features a separated cathode circuit configuration within a FlatPAK 5 x 6 package. The device supports a maximum repetitive peak reverse voltage of 100 V and provides an average forward current of 2 x 5 A per diode. Peak forward surge current reaches 100 A, with a maximum operating junction temperature of 150 °C.
Verify the specific ordering suffix to confirm packaging quantity and reel diameter. The base part number without the automotive suffix does not include AEC-Q101 qualification. Confirm RoHS compliance and halogen-free status based on the M3 designation. Ensure the selected package code matches the required delivery mode for production integration.
Select this component for designs requiring high current density in a compact surface-mount footprint. The separated cathode configuration allows independent connection of each diode's cathode terminal. Evaluate thermal resistance requirements against the recommended copper pad area to ensure adequate heat dissipation during continuous operation.
This device belongs to the V10K series of high current density surface-mount Trench MOS Barrier Schottky Rectifiers. The series utilizes advanced trench technology to minimize forward voltage drop while maintaining robust performance under high surge conditions. The FlatPAK 5 x 6 package offers a compact solution for modern PCB layouts.
V10K100DUHM3/H
No, the standard V10K100DU-M3/H is not AEC-Q101 qualified. Automotive-grade versions are available with the HM3 suffix in the ordering code.
The typical instantaneous forward voltage is 0.54 V at an ambient temperature of 25 °C when the forward current is 2.5 A.
The thermal resistance from junction-to-ambient (RθJA) is typically 100 °C/W, while the junction-to-mount (RθJM) is typically 3.0 °C/W.
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