V6KM120DU-M3/I

Diode Arrays Overview

The V6KM120DU-M3/I is a high current density surface-mount Trench MOS Barrier Schottky rectifier manufactured by Vishay General Semiconductor. It features a dual separated cathode configuration within a FlatPAK 5 x 6 package. The device supports a maximum repetitive peak reverse voltage of 120 V and provides an average forward current of 2 x 3 A per diode. Key electrical characteristics include a peak forward surge current of 80 A, a maximum junction temperature of 175 °C, and ultra-low forward voltage drop specifications.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology to achieve low forward voltage drop and reduced power losses for high efficiency operation.
• Features a separated cathode circuit configuration designed for optimized thermal management in compact surface-mount layouts.
• Complies with J-STD-020 standards for moisture sensitivity level 1 and withstands lead-free soldering at a maximum peak temperature of 260 °C.

Diode Arrays Applications

• Low voltage high frequency DC/DC converters
• Freewheeling diodes in power supply circuits
• Polarity protection applications

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and delivery mode. The /I suffix indicates a base quantity of 6000 units delivered in a 13-inch diameter plastic tape and reel. Confirm that the M3 designation aligns with required halogen-free and RoHS compliance standards for your manufacturing process.

Diode Arrays Selection Notes

Select this component when designing circuits requiring a dual Schottky rectifier with separated cathodes in a FlatPAK 5 x 6 footprint. Ensure the application operates within the 120 V reverse voltage limit and utilizes the recommended copper pad area to maintain the specified thermal resistance from junction to ambient.

Diode Arrays Part Context

This part belongs to the V6KM series of Trench MOS Barrier Schottky Rectifiers. It shares the same physical package and core technology as variants like the V6KM45DU-M3/I but is distinguished by its higher 120 V blocking capability. The series is engineered for high current density applications where low forward voltage is critical.

Diode Arrays Replacement Considerations

Direct substitutes within the same family include the V6KM45DU-M3/I for lower voltage requirements. Automotive qualified equivalents are available under the HM3 ordering code, such as the V6KM120DUHM3/I, which maintains identical electrical ratings while meeting AEC-Q101 qualification standards.

Diode Arrays FAQ

What is the thermal resistance from junction to mount?

The typical thermal resistance from junction to mount (RθJM) is 3.5 °C/W, with a maximum rating of 4.5 °C/W.

Is this component suitable for automotive applications?

The standard V6KM120DU-M3/I is not explicitly listed as AEC-Q101 qualified. Automotive versions are available under the HM3 ordering code, such as the V6KM120DUHM3/I.

How does the forward voltage change at elevated temperatures?

At a junction temperature of 125 °C and a forward current of 1.5 A, the instantaneous forward voltage drops to a typical value of 0.51 V.