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VBT2080C-M3/8W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 80V 10A TO263AB. Review the specifications below when checking this part for your BOM.
The VBT2080C-M3/8W is a dual Trench MOS Barrier Schottky (TMBS) rectifier in a D2PAK (TO-263AB) package. It features a maximum repetitive peak reverse voltage of 80 V and a total maximum average forward rectified current of 20 A, with 10 A per diode. The device exhibits an ultra-low forward voltage drop of 0.52 V at 5 A and 0.60 V at 10 A. Peak forward surge current is rated at 100 A per diode. Operating junction temperature ranges from -55 °C to +150 °C.
Verify the specific ordering suffix '/8W' corresponds to the tape and reel delivery mode with a base quantity of 800 units. Confirm that the component meets RoHS compliance and halogen-free requirements as specified for the M3 series. Ensure thermal management aligns with the provided derating curves for the intended operating environment.
Select this component for designs requiring common cathode configurations with low conduction losses. The D2PAK package supports efficient heat dissipation via the exposed pad. Verify that the 80 V rating accommodates system voltage spikes and that the 10 A per diode limit suits the continuous load requirements without exceeding thermal resistance limits.
This part belongs to Vishay's Dual Trench MOS Barrier Schottky Rectifier family. It shares core TMBS technology with variants like the VFT2080C but utilizes a surface-mount D2PAK case instead of through-hole packages. The M3 suffix indicates lead-free construction compliant with modern environmental directives.
VBT2080C-E3/4W
The typical thermal resistance per diode is 3.0 °C/W.
Yes, it meets MSL level 1 per J-STD-020 with a maximum peak reflow temperature of 245 °C.
The maximum instantaneous forward voltage at 10 A is 0.70 V.
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