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VS-183NQ100PBF is listed in the Single Diodes range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE SCHO 100V 180A D67 HALFPAK. Review the specifications below when checking this part for your BOM.
The VS-183NQ100PbF is a high-performance Schottky rectifier module from Vishay Semiconductors, rated for 180 A average forward current and 100 V maximum DC reverse voltage. It utilizes proprietary barrier technology to ensure low reverse leakage at elevated temperatures, supporting reliable operation up to a 175 °C junction temperature. The device features a HALF-PAK (D-67) package with a lug terminal anode and base cathode configuration. Key electrical characteristics include a maximum forward voltage drop of 0.91 V at 180 A and 25 °C, and a peak non-repetitive surge current capability of 22,000 A.
Verify the specific ordering suffix against official documentation to confirm compliance details. Ensure that thermal management requirements align with the specified maximum thermal resistance values. Confirm that mounting torque specifications are strictly adhered to during installation to maintain mechanical integrity and thermal performance.
Select this component when high current handling and low forward voltage drop are critical for system efficiency. Consider the 175 °C junction temperature rating for environments requiring robust thermal performance. Evaluate the HALF-PAK package dimensions and mounting requirements to ensure compatibility with existing heatsink and chassis designs.
This part belongs to the VS-183NQ.. series of high current Schottky rectifier modules. The series is engineered for applications demanding high reliability and efficient power conversion under heavy load conditions. The D-67 package offers a compact solution for high-power density designs while maintaining effective thermal dissipation capabilities.
VS-243NQ100PBF
The device supports operation up to a maximum junction temperature of 175 °C.
The module features a lug terminal anode and a base cathode configuration.
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