XP6NA3R0H

Single FETs, MOSFETs Overview

The XP6NA3R0H is a single N-channel enhancement mode MOSFET manufactured by YAGEO XSemi using silicon technology. It features a TO-252-3/2 surface-mount package and operates within a temperature range of -55°C to +150°C. Key electrical parameters include a drain-source breakdown voltage (Vds) of 60 V, a continuous drain current (Id) of 126 A, and a maximum gate-source voltage (Vgs) of ±20 V. The device exhibits a low on-resistance (Rds(on)) of 3 mΩ, a gate charge (Qg) of 70 nC, and a threshold voltage (Vgs(th)) of 4 V. Power dissipation is rated at 2 W, with typical switching times including a rise time of 75 ns and fall time of 88 ns.

Single FETs, MOSFETs Feature Summary

• Single N-channel configuration for high-current switching applications
• Low on-resistance design for efficient power management
• Enhancement mode operation with standard gate drive compatibility
• Robust thermal performance suitable for demanding environments

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Motor control systems
• Power supply output stages
• Load switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and packaging type against official YAGEO XSemi documentation before procurement. Confirm that the component meets required RoHS compliance standards for your target market. Ensure the selected package variant matches your PCB footprint requirements. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and availability status.

Single FETs, MOSFETs Selection Notes

Select this component when a 60 V N-channel MOSFET with high current capability is required in a compact surface-mount package. Consider the 3 mΩ on-resistance for minimizing conduction losses in power paths. Evaluate the 126 A current rating against peak load requirements. Verify that the TO-252-3/2 package fits within the available board space and thermal constraints of the design.

Single FETs, MOSFETs Part Context

This part belongs to the XP series of power MOSFETs from YAGEO XSemi, designed for general-purpose power switching. The series utilizes advanced silicon planar technology to achieve low on-resistance and fast switching speeds. The XP6NA3R0H specifically targets applications requiring high efficiency and reliability in compact form factors.

Single FETs, MOSFETs Replacement Considerations

Consult official YAGEO XSemi substitution guides for verified alternatives. Ensure any replacement matches the 60 V rating, N-channel polarity, and TO-252-3/2 package dimensions. Verify that the substitute component meets or exceeds the 3 mΩ on-resistance and 126 A current specifications.