ZTX550STZ

Single Bipolar Transistors Overview

The ZTX550STZ is an obsolete PNP medium power transistor manufactured by Diodes Incorporated. It features a maximum continuous collector current of -1 A and peak pulse current of -2 A. The device supports junction temperatures up to +200°C and offers 1 W power dissipation in standard mounting configurations. Electrical characteristics include a collector-base breakdown voltage of -60 V, collector-emitter breakdown voltage of -45 V, and emitter-base breakdown voltage of -5 V. The DC current gain ranges from 15 to 300 at -150 mA, with a typical current gain-bandwidth product of 150 MHz.

Single Bipolar Transistors Feature Summary

• Supports high-temperature operation with a junction temperature rating up to +200°C
• Provides high continuous collector current capability for medium power applications
• Compliant with RoHS standards and free from halogen and antimony

Single Bipolar Transistors Applications

• LCD backlight converters
• Emergency lighting systems
• DC-DC converters

Single Bipolar Transistors Procurement Notes

Verify component obsolescence status before procurement planning. Confirm availability of the designated replacement part number ZTX551STZ. Ensure design specifications align with the updated electrical parameters of the successor model. Review manufacturer documentation for any changes in mechanical dimensions or thermal resistance values associated with the transition.

Single Bipolar Transistors Selection Notes

Select this component only if legacy compatibility is strictly required due to its obsolete status. Evaluate the ZTX551STZ as the primary alternative, noting its higher collector-emitter breakdown voltage of -65 V compared to the -45 V limit of the ZTX550STZ. Verify that the package marking and pinout configuration remain consistent with existing board layouts to facilitate direct substitution without redesign.

Single Bipolar Transistors Part Context

This component belongs to the ZTX550/ZTX551 series of PNP medium power transistors designed for E-Line packages. It serves as a predecessor to the currently released ZTX551STZ variant. The series is engineered for robust performance in general-purpose switching and amplification tasks within consumer and industrial electronics requiring reliable medium-power handling capabilities.

Single Bipolar Transistors Replacement Considerations

Use ZTX551STZ as the confirmed substitute. Note the increased collector-emitter breakdown voltage (-65 V vs -45 V) and adjusted current gain ranges.