Single FETs, MOSFETs ZVP2106GTA product image

ZVP2106GTA

$0.71
  • Description:MOSFET P-CH 60V 450MA SOT223
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:c88801a20401 Category: Brand:

  
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ZVP2106GTA is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET P-CH 60V 450MA SOT223. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for ZVP2106GTA

  • Description:MOSFET P-CH 60V 450MA SOT223
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:450mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id:3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:100 pF @ 18 V
  • FET Feature:-
  • Power Dissipation (Max):2W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-223-3
  • Package / Case:TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for ZVP2106GTA

ZVP2106GTA

Single FETs, MOSFETs Overview

The ZVP2106GTA is a P-Channel Enhancement Mode Vertical DMOSFET manufactured by Diodes Incorporated in an SOT-223 package. It features a drain-source voltage (VDS) of -60 V and a continuous drain current (ID) of -450 mA at +25°C. The device exhibits a maximum static drain-source on-state resistance (RDS(on)) of 5 Ω at VGS = -10 V. Additional electrical characteristics include a gate-source threshold voltage (VGS(th)) ranging from -1.5 V to -3.5 V, a maximum power dissipation (PTOT) of 2 W, and a storage temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • Designed for high-efficiency power management applications with minimized on-state resistance.
  • Provides fast switching speed capabilities suitable for dynamic load control.
  • Constructed using lead-free finish materials that are RoHS compliant.
  • Manufactured as a halogen and antimony free "Green" device.

Single FETs, MOSFETs Applications

  • Load switches
  • DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TA corresponds to the Tape & Reel carrier configuration containing 1,000 units per reel. Confirm compliance requirements against EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2), and 2015/863/EU (RoHS 3). Ensure the application environment remains within the specified thermal limits and moisture sensitivity level 1 per J-STD-020 standards.

Single FETs, MOSFETs Selection Notes

Select this component when a P-Channel MOSFET with a -60 V breakdown voltage and low on-resistance is required for compact designs. The SOT-223 package provides a balance between thermal performance and space constraints. Verify that the gate drive voltage meets the -10 V requirement to achieve the specified 5 Ω RDS(on) characteristic effectively.

Single FETs, MOSFETs Part Context

This part belongs to the ZVP2106 series of vertical DMOSFETs produced by Diodes Incorporated. It utilizes a molded plastic package material classified as UL Flammability Rating 94V-0. The terminals feature a matte tin annealed finish over a copper leadframe, ensuring solderability per MIL-STD-202, Method 208.

Single FETs, MOSFETs Replacement Considerations

The datasheet identifies the DMN2027 and USS as equivalent circuit models or internal designations associated with the ZVP2106G architecture. No external cross-reference part numbers are explicitly listed in the official documentation.

ZVP2106GTAZVP2106GTA
$0.71
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