ZVP3306A

Single FETs, MOSFETs Overview

The ZVP3306A is a P-channel enhancement mode vertical DMOS FET manufactured by Diodes Incorporated. It features a Drain-Source Voltage (VDS) of -60 V and a continuous drain current (ID) of -160 mA at 25°C ambient temperature. The device has a maximum static drain-source on-state resistance (RDS(on)) of 14 Ω at VGS=-10V and ID=-200mA. Power dissipation is rated at 625 mW at 25°C, with an operating junction temperature range from -55°C to +150°C. The component utilizes an E-Line TO92 compatible package.

Single FETs, MOSFETs Feature Summary

• Vertical DMOS technology for enhanced performance
• E-Line TO92 compatible through-hole packaging
• High voltage capability suitable for switching applications

Single FETs, MOSFETs Applications

• General purpose switching circuits
• Low power load switching
• Battery protection circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and manufacturing lot details upon procurement. Confirm that the E-Line TO92 package dimensions match the target PCB footprint requirements. Ensure thermal management strategies account for the 625 mW power dissipation rating under expected operating conditions. Cross-reference the part number with official Diodes Incorporated documentation to confirm availability status.

Single FETs, MOSFETs Selection Notes

Select this component when a P-channel MOSFET with a 60 V breakdown voltage and low current handling capability is required. The TO92 compatible package facilitates easy integration into legacy designs or prototypes requiring through-hole mounting. Consider the 14 Ω on-resistance for voltage drop calculations in low-current paths. Evaluate the -55°C to +150°C operating temperature range against environmental constraints.

Single FETs, MOSFETs Part Context

The ZVP3306A belongs to the ZVP series of P-channel MOSFETs from Diodes Incorporated. This series focuses on providing reliable switching solutions in compact packages. The E-Line designation indicates a specific lead frame configuration compatible with standard TO92 footprints, allowing for straightforward replacement in existing designs without PCB layout modifications.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the -60 V VDS, -160 mA ID, and 14 Ω RDS(on) specifications. Verify pinout compatibility (Drain, Gate, Source) for any substitute components. Ensure the alternative device supports the same TO92 compatible package style if mechanical constraints are strict.