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ZXT10N50DE6TA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is TRANS NPN 50V 3A SOT-23-6. Review the specifications below when checking this part for your BOM.
The ZXT10N50DE6TA is a single NPN silicon low saturation switching transistor manufactured by Diodes Incorporated. It features a collector-emitter breakdown voltage (BVCEO) of 50V and supports a continuous collector current of 3A with a peak pulse current of 6A. The device offers a low equivalent on-resistance of 75mΩ and a maximum saturation voltage of 200mV at 1A. Packaged in an SOT-26 surface-mount case, it is qualified to AEC-Q101 standards for high reliability.
Verify the specific ordering suffix TA corresponds to the required reel size and quantity per reel. Confirm that the component meets the necessary environmental compliance requirements, including being halogen and antimony free. Ensure the package type matches the intended PCB layout and soldering process specifications.
Select this component when a 50V NPN transistor with high current handling capability is required. The low saturation voltage makes it suitable for efficient switching applications. Consider the thermal resistance values and safe operating area limits when designing the heat dissipation strategy for the target circuit environment.
This part belongs to the ZXT10N50DE6 series of low saturation switching transistors from Diodes Incorporated. It utilizes a molded plastic green molding compound in an SOT-26 case. The device is designed for robust performance in demanding environments, supported by its AEC-Q101 qualification and wide operating temperature range.
ZXT10N50DE6QTA
The maximum collector-emitter breakdown voltage (BVCEO) is 50V.
Yes, the device is qualified to AEC-Q101 standards for high reliability.
The maximum continuous collector current is 3A.
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