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Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
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| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| IXYS | IGBT 600V 75A ISOPLUS247 | Tube | ISOPLUS247™ | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT 600V 68A ISOPLUS247 | Tube | ISOPLUS247™ | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT 600V 68A ISOPLUS247 | Tube | ISOPLUS247™ | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT 600V 75A ISOPLUS247 | Tube | ISOPLUS247™ | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT PT 600V 75A ISOPLUS247 | Tube | ISOPLUS247™ | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT PT 600V 75A ISOPLUS247 | Tube | ISOPLUS247™ | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
 IXGR50N90B2D1 $4.77 | IXYS | IGBT NPT 900V 40A ISOPLUS247 | Tube | ISOPLUS247™ | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) |
 IXGR55N120A3H1 $17.43 | IXYS | IGBT PT 1200V 70A ISOPLUS247 | Tube | ISOPLUS247™ | Through Hole | GenX3™ | -55°C ~ 150°C (TJ) |
