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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT 1200V 54A ISOPLUS247TubeISOPLUS247™Through Hole--55°C ~ 150°C (TJ)
IXYSIGBT 1200V 70A ISOPLUS247TubeISOPLUS247™Through HoleHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT 600V 66A ISOPLUS247TubeISOPLUS247™Through HoleHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT 600V 66A ISOPLUS247TubeISOPLUS247™Through HoleHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT 600V 70A ISOPLUS247TubeISOPLUS247™Through HoleHiPerFAST™-40°C ~ 150°C (TJ)
IXYSIGBT PT 600V 60A ISOPLUS247TubeISOPLUS247™Through HoleHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 60A ISOPLUS247TubeISOPLUS247™Through HoleHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT 600V 70A ISOPLUS247TubeISOPLUS247™Through HoleHiPerFAST™-40°C ~ 150°C (TJ)
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