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Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
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| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| IXYS | IGBT 600V 14A TO-220-3 | Tube | TO-220-3 | Through Hole | HiPerFAST™, Lightspeed™ | -55°C ~ 150°C (TJ) | |
 IXGP8N100 $5.98 | IXYS | IGBT PT 1000V 16A TO-220-3 | Tube | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
| IXYS | IGBT 300V 400A TO-3P | Tube | TO-3P | Through Hole | - | - | |
| IXYS | IGBT PT 1200V 40A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT 300V 240A TO-3P | Tube | TO-3P | Through Hole | Polar™ | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT 1200V 50A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT PT 600V 100A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT PT 600V 90A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) |
