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Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| IXYS | IGBT 1200V 40A TO-220-3 | Tube | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT 600V 40A TO-220-3 | Tube | TO-220-3 | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
 IXGP24N120C3 $3.93 | IXYS | IGBT PT 1200V 48A TO-220-3 | Tube | TO-220-3 | Through Hole | GenX3™ | -55°C ~ 150°C (TJ) |
| IXYS | IGBT 600V 48A TO-220-3 | Tube | TO-220-3 | Through Hole | HiPerFAST™, Lightspeed™ | -55°C ~ 150°C (TJ) | |
IXGP28N60A3 $1.75 | IXYS | IGBT PT 600V 75A TO-220-3 | Tube | TO-220-3 | Through Hole | GenX3™ | -55°C ~ 150°C (TJ) |
 IXGP28N60A3M $2.26 | IXYS | IGBT PT 600V 38A TO220 ISOLATED | Tube | TO-220 Isolated Tab | Through Hole | GenX3™ | -55°C ~ 150°C (TJ) |
| IXYS | IGBT 1000V 4A TO-220-3 | Tube | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT 1000V 4A TO-220-3 | Tube | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
