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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT PT 1200V 60A TO-220-3TubeTO-220-3Through HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT 600V 70A TO-220-3TubeTO-220-3Through HoleHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 56A TO-220-3TubeTO-220-3Through Hole--55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 70A TO-220-3TubeTO-220-3Through HoleHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 60A TO-220-3TubeTO-220-3Through HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 60A TO-220-3TubeTO-220-3Through HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V TO-220-3TubeTO-220-3Through HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 300V TO-220-3TubeTO-220-3Through HoleGenX3™-55°C ~ 150°C (TJ)
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