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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() IXGQ85N33PCD1 $6.70 | IXYS | IGBT 330V 85A 150W TO3P | Tube | TO-3P | Through Hole | Polar™ | -55°C ~ 150°C (TJ) |
| IXYS | IGBT 270V 90A 150W TO3P | Tube | TO-3P | Through Hole | Polar™ | -55°C ~ 150°C (TJ) | |
![]() IXGQ90N33TCD1 $2.95 | IXYS | IGBT TRENCH 330V 90A TO-3P | Tube | TO-3P | Through Hole | - | - |
| IXYS | IGBT PT 600V 156A ISOPLUS247 | Tube | ISOPLUS247™ | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT PT 600V 75A ISOPLUS247 | Tube | ISOPLUS247™ | Through Hole | HiPerFAST™, Lightspeed 2™ | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT 600V 15A ISOPLUS247 | Tube | ISOPLUS247™ | Through Hole | HiPerFAST™ | -40°C ~ 150°C (TJ) | |
| IXYS | IGBT 1700V 16A ISOPLUS247 | Tube | ISOPLUS247™ | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() IXGR24N120C3D1 $12.61 | IXYS | IGBT PT 1200V 48A ISOPLUS247 | Tube | ISOPLUS247™ | Through Hole | GenX3™ | -55°C ~ 150°C (TJ) |

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