ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| IXYS | IGBT 600V 42A ISOPLUS247 | Tube | ISOPLUS247™ | Through Hole | HiPerFAST™ | -40°C ~ 150°C (TJ) | |
| IXYS | IGBT 600V 42A ISOPLUS247 | Tube | ISOPLUS247™ | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT NPT 1700V 26A ISOPLUS247 | Tube | ISOPLUS247™ | Through Hole | - | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT NPT 1700V 38A ISOPLUS247 | Box | ISOPLUS247™ | Through Hole | - | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT 600V 45A ISOPLUS247 | Tube | ISOPLUS247™ | Through Hole | HiPerFAST™, Lightspeed™ | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT 600V 45A ISOPLUS247 | Tube | ISOPLUS247™ | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT PT 900V 47A ISOPLUS247 | Tube | ISOPLUS247™ | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT PT 1200V 70A ISOPLUS247 | Tube | ISOPLUS247™ | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) |
