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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT PT 1200V 22A TO-220-3TubeTO-220-3Through HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT 600V 24A TO-220-3TubeTO-220-3Through HoleHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT 600V 24A TO-220-3TubeTO-220-3Through HoleHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT 600V 24A TO-220-3TubeTO-220-3Through HoleHiPerFAST™, Lightspeed™-55°C ~ 150°C (TJ)
IXYSIGBT 1000V 30A TO-220-3TubeTO-220-3Through HoleLightspeed™-55°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 30A TO-220-3TubeTO-220-3Through HoleHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT 1200V 30A TO-220-3TubeTO-220-3Through HoleLightspeed™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 40A TO-220-3TubeTO-220-3Through HoleHiPerFAST™-55°C ~ 150°C (TJ)
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