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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT PT 600V 75A TO-264TubeTO-264 (IXGK)Through HoleHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 125A TO-264TubeTO-264 (IXGK)Through HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 75A TO-264TubeTO-264 (IXGK)Through Hole--55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 75A TO-264TubeTO-264 (IXGK)Through HoleHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 75A TO-264TubeTO-264 (IXGK)Through HoleHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT 600V 460W TO264TubeTO-264 (IXGK)Through HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 75A TO-264TubeTO-264 (IXGK)Through HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 75A TO-264TubeTO-264 (IXGK)Through HoleGenX3™-55°C ~ 150°C (TJ)
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