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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT PT 600V 75A TO-247ADTubeTO-247ADThrough HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 300V 75A TO-247ADTubeTO-247ADThrough HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 75A TO-247ADTubeTO-247ADThrough HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 75A TO-268TubeTO-268Through HoleHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT 1700V 170A PLUS264TubePLUS264™Through Hole--55°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 240A TO-264TubeTO-264 (IXGK)Through HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 200A TO-264TubeTO-264 (IXGK)Through HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 200A TO-264TubeTO-264 (IXGK)Through HoleHiPerFAST™-55°C ~ 150°C (TJ)
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