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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT 600V 50A TO-204AETubeTO-204AEThrough Hole--55°C ~ 150°C (TJ)
IXYSIGBT 600V 75A TO-204AETubeTO-204AEThrough Hole--55°C ~ 150°C (TJ)
IXYSIGBT 1700V 280A SOT-227BTubeSOT-227BChassis Mount--55°C ~ 150°C (TJ)
IXYSIGBT 600V 20A TO-220-3TubeTO-220-3Through Hole--
IXYSIGBT 1000V 24A TO-220-3TubeTO-220-3Through Hole--55°C ~ 150°C (TJ)
IXYSIGBT 1000V 24A TO-220-3TubeTO-220-3Through Hole--55°C ~ 150°C (TJ)
IXYSIGBT 1000V 24A TO-220-3TubeTO-220-3Through Hole--55°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 24A TO-220-3TubeTO-220-3Through Hole--55°C ~ 150°C (TJ)
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