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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT PT 600V 75A ISOPLUS247TubeISOPLUS247™Through HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 75A ISOPLUS247TubeISOPLUS247™Through HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 80A ISOPLUS247TubeISOPLUS247™Through HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 75A ISOPLUS247TubeISOPLUS247™Through HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT NPT 1700V 20A TO-268AATubeTO-268AASurface Mount--55°C ~ 150°C (TJ)
IXYSIGBT NPT 1700V 10A TO-268AATubeTO-268AASurface Mount--55°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 30A TO-268AATubeTO-268AASurface MountHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT 1200V 30A TO-268AATubeTO-268AASurface Mount--55°C ~ 150°C (TJ)
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