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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT NPT 600V 31A TO263-3-2Tape & Reel (TR)PG-TO263-3-2Surface Mount--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 600V 31A TO263-3-2Tape & Reel (TR),BulkPG-TO263-3-2Surface Mount--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 600V 31A TO263-3-2BulkPG-TO263-3-2Surface Mount--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 600V 27A TO263-3-2Tape & Reel (TR)PG-TO263-3-2Surface Mount--55°C ~ 150°C (TJ)
SemikronIGBT,Six-Pack,1200V,50ARetail Package--*-
SemikronIGBT,Six-Pack,1200V,50ARetail Package--*-
Infineon TechnologiesIGBT NPT 1200V 6.2A TO220-3TubePG-TO220-3-1Through Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBTBulk--*-
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