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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() SKW20N60HSFKSA1 $2.12 | Infineon Technologies | IGBT NPT 600V 36A TO247-3 | Tube,Tube | PG-TO247-3-1 | Through Hole | - | -55°C ~ 150°C (TJ) |
| Infineon Technologies | IGBT NPT 1200V 46A TO247-3 | Tube | PG-TO247-3-1 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT NPT 600V 41A TO247-3 | Tube | PG-TO247-3-1 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT NPT 600V 41A TO247-3 | Tube | PG-TO247-3-1 | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() SLA5222 $8.59 | Sanken Electric USA Inc. | IGBT 600V 30A PFC | Tube | 7-SIP | Through Hole | - | 150°C (TJ) |
![]() SLA5227 $3.34 | Sanken Electric USA Inc. | IGBT 600V 30A 12-SIP | Tube | 12-SIP | Through Hole | - | 150°C (TJ) |
![]() STB1081L3 $0.75 | onsemi | TRANS IGBT CHIP N-CH 380V 15A 4P | Bulk | - | - | * | - |
![]() STB1081SL3G $0.74 | onsemi | IGBT D2PAK 350V SPECIAL | Bulk | - | - | * | - |

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