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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
STMicroelectronicsIGBT 420V 30A D2PAKTape & Reel (TR),Cut Tape (CT)D2PAKSurface MountPowerMESH™-55°C ~ 175°C (TJ)
STMicroelectronicsIGBT 600V 40A 130W D2PAKTape & Reel (TR),Cut Tape (CT)D2PAKSurface MountPowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT 600V 35A D2PAKTape & Reel (TR),Cut Tape (CT)D2PAKSurface MountPowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT 600V 35A 125W D2PAKTape & Reel (TR)D2PAKSurface MountPowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT 600V 40A 130W D2PAKTape & Reel (TR)D2PAKSurface MountPowerMESH™-65°C ~ 150°C (TJ)
STMicroelectronicsIGBT TRENCH FS 600V 40A D2PAKTape & Reel (TR),Cut Tape (CT)D2PAKSurface Mount--55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 650V 40A D2PAK-3Tape & Reel (TR),Cut Tape (CT)D2PAK-3Surface MountHB2-55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 650V 40A TO-263Tape & Reel (TR)TO-263 (D2PAK)Surface MountHB2-55°C ~ 175°C (TJ)
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