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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
STMicroelectronicsIGBT 600V 20A 65W D2PAKTape & Reel (TR),Cut Tape (CT)D2PAKSurface MountPowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT 600V 20A 65W D2PAKTape & Reel (TR)D2PAKSurface MountPowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT 600V 30A 125W D2PAKTape & Reel (TR),Cut Tape (CT)D2PAKSurface MountPowerMESH™150°C (TJ)
STMicroelectronicsIGBT 600V 25A 80W D2PAKTape & Reel (TR),Cut Tape (CT)D2PAKSurface MountPowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT 600V 25A 80W D2PAKTape & Reel (TR)D2PAKSurface MountPowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT TRENCH FS 600V 30A TO-263Tape & Reel (TR),Cut Tape (CT)TO-263 (D2PAK)Surface Mount--55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 650V 30A TO-263Tape & Reel (TR),Cut Tape (CT)TO-263 (D2PAK)Surface Mount--55°C ~ 175°C (TJ)
STMicroelectronicsIGBT 420V 30A TO-262TubeTO-262 (I2PAK)Through HolePowerMESH™-55°C ~ 175°C (TJ)
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