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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
STMicroelectronicsIGBT TRENCH FS 600V 20A TO-220FPTubeTO-220FPThrough Hole--55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 650V 20A TO-220FPTubeTO-220FPThrough HoleM-55°C ~ 175°C (TJ)
STMicroelectronicsIGBT 600V 23A TO-220FPTubeTO-220FPThrough HolePowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT 600V 9A TO-220FPTape & Reel (TR)TO-220FPThrough HolePowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT 600V 9A TO-220FPTubeTO-220FPThrough HolePowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT 600V 10A TO-220FPTubeTO-220FPThrough HolePowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT 600V 11A TO-220FPTubeTO-220FPThrough HolePowerMESH™-
STMicroelectronicsIGBT 600V 11A TO-220FPTubeTO-220FPThrough HolePowerMESH™-55°C ~ 150°C (TJ)
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