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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() STGF10H60DF $1.84 | STMicroelectronics | IGBT TRENCH FS 600V 20A TO-220FP | Tube | TO-220FP | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGF10M65DF2 $1.55 | STMicroelectronics | IGBT TRENCH FS 650V 20A TO-220FP | Tube | TO-220FP | Through Hole | M | -55°C ~ 175°C (TJ) |
![]() STGF10NB60SD $2.07 | STMicroelectronics | IGBT 600V 23A TO-220FP | Tube | TO-220FP | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
![]() STGF10NC60HD $0.46 | STMicroelectronics | IGBT 600V 9A TO-220FP | Tape & Reel (TR) | TO-220FP | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
![]() STGF10NC60KD $2.05 | STMicroelectronics | IGBT 600V 9A TO-220FP | Tube | TO-220FP | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
![]() STGF10NC60SD $0.46 | STMicroelectronics | IGBT 600V 10A TO-220FP | Tube | TO-220FP | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
![]() STGF14N60D $0.82 | STMicroelectronics | IGBT 600V 11A TO-220FP | Tube | TO-220FP | Through Hole | PowerMESH™ | - |
![]() STGF14NC60KD $2.13 | STMicroelectronics | IGBT 600V 11A TO-220FP | Tube | TO-220FP | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |

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