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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() STGF20M65DF2 $2.16 | STMicroelectronics | IGBT TRENCH FS 650V 40A TO-220FP | Tube | TO-220FP | Through Hole | M | -55°C ~ 175°C (TJ) |
![]() STGF20NB60S $0.79 | STMicroelectronics | IGBT 600V 24A TO-220FP | Tube | TO-220FP | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
![]() STGF30H60DF $3.43 | STMicroelectronics | IGBT TRENCH FS 600V 60A TO-220FP | Tube | TO-220FP | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() STGF30H65DFB2 $0.81 | STMicroelectronics | IGBT TRENCH FS 650V 50A TO-220FP | Bulk | TO-220FP | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGF30M65DF2 $2.67 | STMicroelectronics | IGBT TRENCH FS 650V 60A TO-220FP | Tube | TO-220FP | Through Hole | M | -55°C ~ 175°C (TJ) |
![]() STGF30NC60S $1.06 | STMicroelectronics | IGBT 600V 22A TO-220FP | Tube | TO-220FP | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
![]() STGF35HF60W $3.23 | STMicroelectronics | IGBT 600V 19A TO-220FP | Tube | TO-220FP | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() STGF3HF60HD $0.29 | STMicroelectronics | IGBT 600V 7.5A TO-220FP | Tube | TO-220FP | Through Hole | - | -55°C ~ 150°C (TJ) |

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