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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() STGF3NB60FD $0.54 | STMicroelectronics | IGBT 600V 6A TO-220FP | Tube | TO-220FP | Through Hole | PowerMESH™ | 150°C (TJ) |
![]() STGF3NC120HD $2.19 | STMicroelectronics | IGBT 1200V 6A TO-220FP | Tube | TO-220FP | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
![]() STGF4M65DF2 $1.39 | STMicroelectronics | IGBT TRENCH FS 650V 8A TO-220FP | Tube | TO-220FP | Through Hole | M | -55°C ~ 175°C (TJ) |
![]() STGF5H60DF $1.10 | STMicroelectronics | IGBT TRENCH FS 600V 10A TO-220FP | Tube | TO-220FP | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGF6M65DF2 $0.43 | STMicroelectronics | IGBT TRENCH FS 650V 12A TO-220FP | Tube | TO-220FP | Through Hole | M | -55°C ~ 175°C (TJ) |
![]() STGF6NC60HD $1.53 | STMicroelectronics | IGBT 600V 6A TO-220FP | Tube | TO-220FP | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
![]() STGF7H60DF $1.72 | STMicroelectronics | IGBT TRENCH FS 600V 14A TO-220FP | Tube | TO-220FP | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGF7NB60SL $1.96 | STMicroelectronics | IGBT 600V 15A TO-220FP | Tube | TO-220FP | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |

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