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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Nexperia USA Inc. | MOSFET N-CH 40V 100A TO220AB | Tube | TO-220AB | Through Hole | TrenchMOS™ | -55°C ~ 175°C (TJ) | |
![]() BUK753R4-30B,127 $0.84 | NXP USA Inc. | MOSFET N-CH 30V 75A TO220AB | Tube | TO-220AB | Through Hole | TrenchMOS™ | -55°C ~ 175°C (TJ) |
| NXP USA Inc. | MOSFET N-CH 60V 120A TO220AB | Tube | TO-220AB | Through Hole | TrenchMOS™ | -55°C ~ 175°C (TJ) | |
![]() BUK753R8-80E,127 $1.21 | Nexperia USA Inc. | TRANSISTOR >30MHZ | Tube | TO-220AB | Through Hole | TrenchMOS™ | -55°C ~ 175°C (TJ) |
| NXP USA Inc. | MOSFET N-CH 100V 37A TO220AB | Tube | TO-220AB | Through Hole | TrenchMOS™ | -55°C ~ 175°C (TJ) | |
![]() BUK754R0-40C,127 $0.55 | Nexperia USA Inc. | MOSFET N-CH 40V 100A TO220AB | Tube | TO-220AB | Through Hole | TrenchMOS™ | -55°C ~ 175°C (TJ) |
![]() BUK754R0-55B,127 $0.79 | Nexperia USA Inc. | PFET, 75A I(D), 55V, 0.004OHM, 1 | Tube | TO-220AB | Through Hole | TrenchMOS™ | -55°C ~ 175°C (TJ) |
![]() BUK754R3-40B,127 $0.98 | Nexperia USA Inc. | PFET, 75A I(D), 40V, 0.0043OHM, | Tube | TO-220AB | Through Hole | TrenchMOS™ | -55°C ~ 175°C (TJ) |

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