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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() BUK7E2R3-40C,127 $1.01 | Nexperia USA Inc. | MOSFET N-CH 40V 100A I2PAK | Tube | - | - | * | - |
![]() BUK7E2R3-40E,127 $0.95 | Nexperia USA Inc. | NEXPERIA BUK7E2R3-40E - 120A, 40 | Bulk | I2PAK | Through Hole | TrenchMOS™ | -55°C ~ 175°C (TJ) |
| Nexperia USA Inc. | MOSFET N-CH 60V 120A I2PAK | Tube | I2PAK | Through Hole | TrenchMOS™ | -55°C ~ 175°C (TJ) | |
![]() BUK7E2R7-30B,127 $1.20 | Nexperia USA Inc. | PFET, 75A I(D), 30V, 0.0027OHM, | Tube | I2PAK | Through Hole | TrenchMOS™ | -55°C ~ 175°C (TJ) |
![]() BUK7E3R1-40E,127 $0.78 | Nexperia USA Inc. | NEXPERIA BUK7E3R1-40E - 100A, 40 | Bulk | I2PAK | Through Hole | TrenchMOS™ | -55°C ~ 175°C (TJ) |
![]() BUK7E3R5-60E,127 $0.99 | Nexperia USA Inc. | MOSFET N-CH 60V 120A I2PAK | Bulk,Tube | I2PAK | Through Hole | TrenchMOS™ | -55°C ~ 175°C (TJ) |
![]() BUK7E4R0-80E,127 $1.40 | Nexperia USA Inc. | MOSFET N-CH 80V 120A I2PAK | Tube | I2PAK | Through Hole | TrenchMOS™ | -55°C ~ 175°C (TJ) |
![]() BUK7E4R3-75C,127 $1.39 | Nexperia USA Inc. | MOSFET N-CH 75V 100A I2PAK | Tube | I2PAK | Through Hole | TrenchMOS™ | -55°C ~ 175°C (TJ) |

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