SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FF200R12KE3HOSA1 $93.33 | Infineon Technologies | MEDIUM POWER 62MM | Bulk | - | - | * | - |
![]() FF200R12KE4HOSA1 $75.57 | Infineon Technologies | IGBT MOD 1200V 240A 1100W | Tray | Module | Chassis Mount | C | -40°C ~ 150°C (TJ) |
![]() FF200R12KE4PHOSA1 $64.69 | Infineon Technologies | IGBT MODULE 1200V 200A | Tray | Module | Chassis Mount | C | -40°C ~ 150°C |
![]() FF200R12KS4HOSA1 $117.45 | Infineon Technologies | IGBT MOD 1200V 275A 1400W | Tray | Module | Chassis Mount | C | -40°C ~ 125°C |
![]() FF200R12KS4PHOSA1 $121.99 | Infineon Technologies | IGBT MOD 1200V 275A 1400W | Tray | Module | Chassis Mount | - | -40°C ~ 125°C |
![]() FF200R12KT3EHOSA1 $93.33 | Infineon Technologies | IGBT MODULE 1200V 1050W | Bulk,Tray | Module | Chassis Mount | C | -40°C ~ 125°C |
![]() FF200R12KT3HOSA1 $100.18 | Infineon Technologies | IGBT MODULE 1200V 1050W | Bulk,Tray | Module | Chassis Mount | C | -40°C ~ 125°C |
![]() FF200R12KT4HOSA1 $78.88 | Infineon Technologies | IGBT MOD 1200V 320A 1100W | Tray | Module | Chassis Mount | C | -40°C ~ 150°C (TJ) |