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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT 600V 49A TO-220ABTubeTO-220ABThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 600V 42A TO-220ABTubeTO-220ABThrough Hole--55°C ~ 150°C (TJ)
International RectifierIRG4BC40 - DISCRETE IGBT WITHOUTBulk--*-
Infineon TechnologiesIGBT 600V 60A TO-220ABTubeTO-220ABThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 600V 40A TO-220ABTubeTO-220ABThrough Hole--55°C ~ 150°C (TJ)
International RectifierIGBT 600V 40A TO-220ABBulkTO-220ABThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesULTRAFAST SPEED IGBTBulk--*-
Infineon TechnologiesIGBT 600V 40A TO-220ABTubeTO-220ABThrough Hole--55°C ~ 150°C (TJ)
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