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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Infineon Technologies | IGBT CHIP | Bulk | Die | Surface Mount | - | - | |
| Infineon Technologies | IGBT CHIP | Bulk | Die | Surface Mount | - | - | |
 IRG4IBC10UD $3.26 | Infineon Technologies | IGBT 600V 6.8A TO220-FP | Tube | PG-TO220-FP | Through Hole | - | -55°C ~ 150°C (TJ) |
 IRG4IBC10UDPBF $1.12 | Infineon Technologies | IGBT 600V 6.8A TO220AB FP | Bulk,Tube | TO-220AB Full-Pak | Through Hole | - | -55°C ~ 150°C (TJ) |
IRG4IBC20FD $2.81 | Infineon Technologies | IGBT 600V 14.3A TO220-FP | Tube | PG-TO220-FP | Through Hole | - | -55°C ~ 150°C (TJ) |
IRG4IBC20FDPBF $1.37 | Infineon Technologies | IGBT 600V 14.3A TO220AB FP | Bulk,Tube | TO-220AB Full-Pak | Through Hole | - | -55°C ~ 150°C (TJ) |
IRG4IBC20KD $1.46 | Infineon Technologies | IGBT 600V 11.5A TO220-FP | Tube | PG-TO220-FP | Through Hole | - | -55°C ~ 150°C (TJ) |
| Infineon Technologies | IGBT 600V 11.5A TO220AB FP | Tube | TO-220AB Full-Pak | Through Hole | - | -55°C ~ 150°C (TJ) |
