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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() IRG4IBC20UDPBF $0.82 | International Rectifier | IGBT 600V 11.4A TO220AB FP | Bulk | TO-220AB Full-Pak | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() IRG4IBC20W $2.25 | Infineon Technologies | IGBT 600V 11.8A TO220-FP | Tube | PG-TO220-FP | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() IRG4IBC20WPBF $0.65 | Infineon Technologies | IGBT 600V 12A TO220AB FP | Tube,Tube | TO-220AB Full-Pak | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() IRG4IBC30FD $4.09 | Infineon Technologies | IGBT 600V 20.3A TO220-FP | Tube | PG-TO220-FP | Through Hole | - | -55°C ~ 150°C (TJ) |
| Infineon Technologies | IGBT 600V 20.3A TO220AB FP | Tube | TO-220AB Full-Pak | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() IRG4IBC30KD $1.92 | Infineon Technologies | IGBT 600V 17A TO220-FP | Tube | PG-TO220-FP | Through Hole | - | -55°C ~ 150°C (TJ) |
| Infineon Technologies | IGBT 600V 17A TO220AB FP | Tube | TO-220AB Full-Pak | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() IRG4IBC30S $2.23 | Infineon Technologies | IGBT 600V 23.5A TO220AB FP | Tube | TO-220AB Full-Pak | Through Hole | - | -55°C ~ 150°C (TJ) |

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