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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
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| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Infineon Technologies | IGBT TRENCH 300V 25A TO220AB FP | Tube | TO-220AB Full-Pak | Through Hole | - | -40°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT TRENCH 300V 21A TO220AB FP | Tube | TO-220AB Full-Pak | Through Hole | - | -40°C ~ 150°C (TJ) | |
 IRGIB10B60KD1P $1.45 | Infineon Technologies | IGBT NPT 600V 16A TO220AB FP | Bulk,Tube | TO-220AB Full-Pak | Through Hole | - | -55°C ~ 175°C (TJ) |
| Infineon Technologies | IGBT NPT 600V 19A TO220AB FP | Tube | TO-220AB Full-Pak | Through Hole | - | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | IGBT 600V 7A TO-220FP | Tube | TO-220FP | Through Hole | - | - | |
 IRGIB4630DPBF $1.63 | International Rectifier | IGBT NPT 600V 47A TO220 FP | Tube | PG-TO220 Full Pack | Through Hole | - | -40°C ~ 175°C (TJ) |
| Infineon Technologies | IGBT NPT 600V 65A TO220-3 | Tube | PG-TO220-3 | Through Hole | - | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | IGBT NPT 600V 11A TO220AB FP | Tube | TO-220AB Full-Pak | Through Hole | - | -55°C ~ 175°C (TJ) |
