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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 IXSP20N60B2D1 $2.34 | IXYS | IGBT PT 600V 35A TO-220-3 | Bulk | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
| IXYS | IGBT PT 600V 48A TO-220-3 | Tube | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT PT 600V 35A TO-3P | Bulk | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT PT 1200V 70A ISOPLUS247 | Box | ISOPLUS247™ | Through Hole | - | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT PT 600V 70A ISOPLUS247 | Tube | ISOPLUS247™ | Through Hole | - | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT PT 600V 62A ISOPLUS247 | Tube | ISOPLUS247™ | Through Hole | - | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT 600V ISOPLUS247 | Tube | ISOPLUS247™ | Through Hole | - | - | |
| IXYS | IGBT PT 1200V 30A TO-268AA | Tube | TO-268AA | Surface Mount | - | -55°C ~ 150°C (TJ) |
