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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
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| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| IXYS | IGBT MOD 600V 80A 250W SOT227B | Tube | SOT-227B | Chassis Mount | - | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT MOD 1200V 110A 500W SOT227B | Tube | SOT-227B | Chassis Mount | - | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT MOD 1200V 110A 500W SOT227B | Tube | SOT-227B | Chassis Mount | - | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT MOD 600V 90A 250W SOT227B | Tube | SOT-227B | Chassis Mount | - | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT MOD 600V 160A 500W SOT227B | Tube | SOT-227B | Chassis Mount | - | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT MOD 600V 160A 420W SOT227B | Tube | SOT-227B | Chassis Mount | - | -55°C ~ 150°C (TJ) | |
 IXSP10N60B2D1 $1.63 | IXYS | IGBT PT 600V 20A TO-220-3 | Bulk | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
| IXYS | IGBT 1200V 30A TO-220-3 | Box | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
