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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() LGD8209TI $0.58 | Littelfuse Inc. | IGBT 410V 12A 125W DPAK-3 | Tape & Reel (TR) | - | - | * | - |
![]() LGS8206AUI $0.69 | Littelfuse Inc. | IGBT 390V 20A 150W D2PAK3 | Tube | - | - | * | - |
![]() MDI100-12A3 $36.71 | IXYS | IGBT MODULE 1200V 135A 560W Y4M5 | Box | Y4-M5 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() MDI145-12A3 $40.21 | IXYS | IGBT MODULE 1200V 160A 700W Y4M5 | Box | Y4-M5 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
| IXYS | IGBT MOD 1200V 180A 760W Y3DCB | Box | Y3-DCB | Chassis Mount | - | 150°C (TJ) | |
![]() MDI200-12A4 $71.09 | IXYS | IGBT MOD 1200V 270A 1130W Y3DCB | Box | Y3-DCB | Chassis Mount | - | 150°C (TJ) |
![]() MDI300-12A4 $81.18 | IXYS | IGBT MOD 1200V 330A 1380W Y3-DCB | Box | Y3-DCB | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() MDI400-12E4 $78.22 | IXYS | IGBT MOD 1200V 420A 1700W Y3LI | Box | Y3-Li | Chassis Mount | - | -40°C ~ 150°C (TJ) |

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