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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT 1700V 108A PLUS247TubePLUS247™-3Through HoleXPT™-55°C ~ 175°C (TJ)
IXYSIGBT 2500V 70A TO-247PLUS-HVTubeTO-247PLUS-HVThrough HoleXPT™-55°C ~ 175°C (TJ)
IXYSIGBT 4500V 95A TO-247PLUS-HVTubeTO-247PLUS-HVThrough HoleXPT™-55°C ~ 150°C (TJ)
IXYSIGBT 1700V 178A PLUS247TubePLUS247™-3Through HoleXPT™-55°C ~ 175°C (TJ)
IXYSIGBT 900V 20A TO-252AATubeTO-252AASurface MountGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 900V 20A TO-252AATape & Reel (TR)TO-252AASurface MountGenX3™, XPT™-55°C ~ 175°C (TJ)
Sanken Electric USA Inc.IGBT TRENCH FS 650V 50A TO-247-3TubeTO-247-3Through Hole-175°C (TJ)
Sanken Electric USA Inc.IGBT TRENCH FS 650V 65A TO-247-3TubeTO-247-3Through Hole-175°C (TJ)
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