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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT 900V 310A PLUS247TubePLUS247™-3Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT TRENCH FS 650V 400A PLUS247BulkPLUS247™-3Through HoleGen5 XPT™-55°C ~ 175°C (TJ)
IXYSIGBT 650V 410A PLUS247TubePLUS247™-3Through HoleXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT TRENCH FS 650V 470A PLUS247BulkPLUS247™-3Through HoleGen5 XPT™-55°C ~ 175°C (TJ)
IXYSIGBT TRENCH FS 650V 510A PLUS247BulkPLUS247™-3Through HoleGen5 XPT™-55°C ~ 175°C (TJ)
IXYSIGBT 2500V 95A PLUS247TubePLUS247™-3Through HoleXPT™-55°C ~ 175°C (TJ)
IXYSIGBT 2500V 95A PLUS247TubePLUS247™-3Through HoleXPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 600A PLUS247TubePLUS247™-3Through HoleXPT™, GenX3™-55°C ~ 175°C (TJ)
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