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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBTTubeTO-3PThrough HoleXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT 1200V 104A ISOPLUS247TubeISOPLUS247™Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBTTube----
IXYSIGBT 1200V 56A ISOPLUS247TubeISOPLUS247™Through HoleGenX3™, XPT™-55°C ~ 150°C (TJ)
IXYSIGBT TRENCH FS 650V 290A TO268HVBulkTO-268HV (IXYT)Surface MountGen5 XPT™-55°C ~ 175°C (TJ)
IXYSIGBT 2500V 28A TO-268HVTubeTO-268HV (IXYT)Surface MountXPT™-55°C ~ 175°C (TJ)
IXYSIGBT 1200V 36A TO-268HVTubeTO-268HV (IXYT)Surface MountXPT™, GenX3™-55°C ~ 150°C (TJ)
IXYSIGBT 2500V 95A TO-268TubeTO-268Surface MountXPT™-55°C ~ 175°C (TJ)
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