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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT 4500V 60A TO-268HVTubeTO-268HV (IXYT)Surface MountXPT™-55°C ~ 150°C (TJ)
IXYSIGBT PT 650V 60A TO-268AATubeTO-268AASurface MountGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 1200V 140A TO-268HVTubeTO-268HV (IXYT)Surface MountXPT™, GenX4™-55°C ~ 175°C (TJ)
IXYSIGBT PT 1200V 175A TO-268HVTubeTO-268HV (IXYT)Surface Mount--55°C ~ 175°C (TJ)
IXYSIGBT 900V 165A TO-268AATubeTO-268AASurface MountGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 1200V 300A TO-268HVTubeTO-268HV (IXYT)Surface Mount--55°C ~ 175°C (TJ)
IXYSIGBT TRENCH FS 650V 220A TO268HVBulkTO-268HV (IXYT)Surface MountGen5 XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 1200V 225A PLUS247TubePLUS247™-3Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
Add ComparisonUp to 4 can be added