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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT TRENCH FS 650V 90A TO-220BulkTO-220 (IXYP)Through HoleGen5 XPT™-55°C ~ 175°C (TJ)
IXYSIGBT TRENCH FS 650V 130A TO-220BulkTO-220 (IXYP)Through HoleGen5 XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 130A TO-220-3TubeTO-220-3Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 134A TO-220TubeTO-220 (IXYP)Through HoleXPT™, GenX5™-55°C ~ 175°C (TJ)
IXYSIGBT 900V 20A TO-220-3TubeTO-220-3Through HoleGenX3™, XPT™-
IXYSIGBT 900V 20A TO-220-3TubeTO-220-3Through HoleGenX3™, XPT™-
IXYSIGBT PT 650V 70A TO-3PTubeTO-3PThrough HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 86A TO-3PTubeTO-3PThrough HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
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