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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYS1200V, 85A, XPT GEN4 C4 CO-PACKTubeSOT-227BChassis MountXPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 32A TO-220TubeTO-220Through HoleXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 30A TO-220-3TubeTO-220-3Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 30A TO-220TubeTO-220Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT 650V 15A TO220 ISOLATED TABTubeTO-220 Isolated TabThrough HoleXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT TO220ABTube----
IXYSIGBT PT 650V 38A TO-220-3TubeTO-220-3Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 38A TO-220-3TubeTO-220-3Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
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