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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT MOD 1200V 152A 830W SOT227BTubeSOT-227BChassis MountXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT MOD 1200V 134A 690W SOT227BTubeSOT-227BChassis MountXPT™, GenX3™-55°C ~ 150°C (TJ)
IXYSIGBT MOD 650V 170A 600W SOT227BTubeSOT-227BChassis MountXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSDISC IGBT XPT-GENX3 SOT-227UI(MITubeSOT-227BChassis MountXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT MOD 650V 166A 600W SOT227BTubeSOT-227BChassis, Stud MountXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT PT 1200V 275A SOT-227BTubeSOT-227BChassis MountXPT™, GenX4™-55°C ~ 175°C (TJ)
IXYS1200V,110A, XPT GEN4 B4 CO-PACKTubeSOT-227BChassis MountXPT™-55°C ~ 175°C (TJ)
IXYSIGBT 1200V 110A GEN4 XPT SOT227BTubeSOT-227Chassis MountXPT™-55°C ~ 175°C (TJ)
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